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2SD2340

Part Number	2SD2340
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2340 DESCRIPTION ·Collector-Emitter Breakdown Vo...
Datasheet	2SD2340 PDF File

Overview

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2340 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) ·High DC Current Gain : hFE= 5000(Min) @IC= 3A ·Low Collector Saturation Voltgae- : VCE(sat)= 2.
5V(Max.
)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio，regulator and general purpose.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Pow...

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