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BD112

Part Number	BD112
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor BD112 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Em...
Datasheet	BD112 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD112 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
0V(Max)@ IC = 5A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 15 A IB Base Current-Con...

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