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BD162

Part Number	BD162
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor BD162 DESCRIPTION ·Continuous Collector Current -IC= 4A ·Excel...
Datasheet	BD162 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD162 DESCRIPTION ·Continuous Collector Current -IC= 4A ·Excellent Safe Operating Area ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose switching and amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=25℃ 15 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -65~175 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BD162 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ; IB= 0 VC...

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