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BD536

Part Number	BD536
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon PNP Power Transistor BD536 DESCRIPTION ·DC Current Gain - : hFE = 40@ IC= -0.5A ·Collector-Emitter Sustain...
Datasheet	BD536 PDF File

Overview

isc Silicon PNP Power Transistor BD536 DESCRIPTION ·DC Current Gain - : hFE = 40@ IC= -0.
5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·Complement to Type BD535 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in medium power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -60 VCES Collector-Emitter Voltage -60 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 IB Base Current -1 PC Collector Power Dissipation @ TC=25℃ 50 TJ Junction Temperature 150 Tstg Stor...

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