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BD538

INCHANGE
Part Number BD538
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 30, 2020
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40@ IC= -0.5A ·Collector-Emitter Sustaining Vol...
Datasheet PDF File BD538 PDF File

BD538
BD538

Overview
isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40@ IC= -0.
5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80V(Min) ·Complement to Type BD537 APPLICATIONS ·Designed for use in medium power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -80 VCES Collector-Emitter Voltage -80 VCEO Collector-Emitter Voltage -80 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 IB Base Current -1 PC Collector Power Dissipation @ TC=25℃ 50 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.
5 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W BD538 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD538 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise...


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