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BD535

Part Number	BD535
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon NPN Power Transistor BD535 DESCRIPTION ·DC Current Gain - : hFE = 40@ IC= 0.5A ·Collector-Emitter Sustaini...
Datasheet	BD535 PDF File

Overview

isc Silicon NPN Power Transistor BD535 DESCRIPTION ·DC Current Gain - : hFE = 40@ IC= 0.
5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·Complement to Type BD536 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in medium power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 60 VCES Collector-Emitter Voltage 60 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 8 IB Base Current 1 PC Collector Power Dissipation @ TC=25℃ 50 TJ Junction Temperature 150 Tstg Storage Temp...

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