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BD539A

INCHANGE
Part Number BD539A
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 30, 2020
Detailed Description isc Silicon NPN Power Transistor BD539A DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter B...
Datasheet PDF File BD539A PDF File

BD539A
BD539A

Overview
isc Silicon NPN Power Transistor BD539A DESCRIPTION ·DC Current Gain - : hFE = 40(Min.
)@ IC= 0.
5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Complement to Type BD540A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in medium power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 5 A 2 W 45 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.
78 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.
5 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power ...


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