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BD539B

Part Number	BD539B
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon NPN Power Transistor BD539B DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter B...
Datasheet	BD539B PDF File

Overview

isc Silicon NPN Power Transistor BD539B DESCRIPTION ·DC Current Gain - : hFE = 40(Min.
)@ IC= 0.
5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Complement to Type BD540B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in medium power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature R...

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