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BD539D

Part Number	BD539D
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon NPN Power Transistor BD539D DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter B...
Datasheet	BD539D PDF File

Overview

isc Silicon NPN Power Transistor BD539D DESCRIPTION ·DC Current Gain - : hFE = 40(Min.
)@ IC= 0.
5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Complement to Type BD540D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in medium power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperatur...

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