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BD647

INCHANGE
Part Number BD647
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 30, 2020
Detailed Description isc Silicon NPN Darlington Power Transistor BD647 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Mi...
Datasheet PDF File BD647 PDF File

BD647
BD647

Overview
isc Silicon NPN Darlington Power Transistor BD647 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement to Type BD648 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak 12 A IB Base Current-Continuous Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
15 A 2 W 62.
5 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2 ℃/W Rth j-a Thermal Resistance,Junction to...


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