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BD652

INCHANGE
Part Number BD652
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 30, 2020
Detailed Description isc Silicon PNP Darlington Power Transistor BD652 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(...
Datasheet PDF File BD652 PDF File

BD652
BD652

Overview
isc Silicon PNP Darlington Power Transistor BD652 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD651 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICP Collector Current-Peak -12 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.
15 A 2 W 62.
5 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2 ℃/W Rth j-a Thermal Resistance,J...


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