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BD680

INCHANGE
Part Number BD680
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 30, 2020
Detailed Description isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -80V ·DC Cur...
Datasheet PDF File BD680 PDF File

BD680
BD680

Overview
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -80V ·DC Current Gain— : hFE = 750(Min) @ IC= -1.
5 A ·Complement to Type BD679 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range -0.
1 A 40 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.
13 ℃/W BD680 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARAC...


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