DatasheetsPDF.com

BD712

INCHANGE
Part Number BD712
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 30, 2020
Detailed Description isc Silicon PNP Power Transistor BD712 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter S...
Datasheet PDF File BD712 PDF File

BD712
BD712


Overview
isc Silicon PNP Power Transistor BD712 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.
)@ IC= -0.
5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min.
) ·Complement to Type BD711 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCES Collector-Emitter Voltage VBE= 0 -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Ju...



Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)