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BDW30

INCHANGE
Part Number BDW30
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 30, 2020
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor BDW30 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat...
Datasheet PDF File BDW30 PDF File

BDW30
BDW30

Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor BDW30 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.
6V(Max.
) @IC= 10A ·High Switching Speed ·High DC Current Gain- : hFE= 20(Min.
) @IC= 25A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous 100 V 6 V 30 A ICM Collector Current-Peak PC Collector Power Dissipation TJ Junction Temperature 40 A 250 W 150 ...


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