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BDW53

Part Number	BDW53
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDW53 DESCRIPTION ·High DC Current Gain : hFE= 750(...
Datasheet	BDW53 PDF File

Overview

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDW53 DESCRIPTION ·High DC Current Gain : hFE= 750(Min.
)@ IC= 1.
5A, VCE= 3V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min) ·Low Collector Saturation Voltage ·Complement to Type BDW54 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC IB PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current- Continuous Collector Power Dissipation @T...

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