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IRF9530

Part Number	IRF9530
Manufacturer	INCHANGE
Description	P-Channel MOSFET
Published	Oct 3, 2020
Detailed Description	isc P-Channel Mosfet Transistor INCHANGE Semiconductor IRF9530 FEATURES ·-12A，-100V ·Single pulse avalanche energy rat...
Datasheet	IRF9530 PDF File

Overview

isc P-Channel Mosfet Transistor INCHANGE Semiconductor IRF9530 FEATURES ·-12A，-100V ·Single pulse avalanche energy rated ·Static Drain-Source On-Resistance: RDS(on) =0.
3Ω(Max) ·SOA is power dissipation limited ·Nanosecond switching speeds ·Linear transfer characteristics ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION ·The power MOSFET is designed for applications such as switching regulators,switching convertors,motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) ...

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