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IRF3256

INCHANGE
Part Number IRF3256
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 12, 2020
Detailed Description isc N-Channel MOSFET Transistor IRF3256,IIRF3256 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.4mΩ ·Enhance...
Datasheet PDF File IRF3256 PDF File

IRF3256
IRF3256

Overview
isc N-Channel MOSFET Transistor IRF3256,IIRF3256 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.
4mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·High Speed Power Switching ·Hard Switched and High Frequency Circuits ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 75 IDM Drain Current-Single Pulsed 820 PD Total Dissipation @TC=25℃ 300 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.
5 62 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=150μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=75A IGSS Gate-Source Leakage Current VGS=±20V IDSS Drain-Source Leakage Current VDS=60V; VGS= 0V VSD Diode forward voltage IS =75A; VGS = 0 V IRF3256,IIRF3256 MIN TYP MAX UNIT 60 V 2 4 V 3.
4 mΩ ±100 nA 20 μA 1.
3 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, o...


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