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IRF3808

INCHANGE
Part Number IRF3808
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 12, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.0mΩ ·Enhancement mode ·Fast Sw...
Datasheet PDF File IRF3808 PDF File

IRF3808
IRF3808

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.
0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 140 IDM Drain Current-Single Pulsed 550 PD Total Dissipation @TC=25℃ 330 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.
45 62 UNIT ℃/W ℃/W IRF3808，IIRF3808 isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA VGS(th) Gate Threshold Voltage VDS=10V; ID =250μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=82A IGSS Gate-Source Leakage Current VGS=±20V IDSS Drain-Source Leakage Current VDS=75V; VGS= 0V VSD Diode forward voltage IS=82A, VGS = 0V IRF3808， IIRF3808 MIN TYP MAX UNIT 75 V 2.
0 4.
0 V 7.
0 mΩ ±0.
2 μA 20 μA 1.
3 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to be used in these spe...


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