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2N3906S

Part Number	2N3906S
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Oct 19, 2020
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Low voltage( max .40V ) ·Low current ( max .200mA ) APPLICATIONS ·Designe...
Datasheet	2N3906S PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Low voltage( max .
40V ) ·Low current ( max .
200mA ) APPLICATIONS ·Designed for high-speed switching ·Amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous Ptot Total Power Dissipation TJ Junction Temperature Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a thermal resistance from junction to ambient 2N3906S VALUE -40 -40 -5 -200 300 -55~150 -55~150 UNIT V V V mA mW ℃ ℃ MAX 250 UNIT K/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc S...

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