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1N1184AR

GeneSiC
Part Number 1N1184AR
Manufacturer GeneSiC
Description Silicon Standard Recovery Diode
Published Nov 16, 2020
Detailed Description Silicon Standard Recovery Diode Features • High Surge Capability • Types up to 600 V VRRM • Not ESD Sensitive Note: 1. S...
Datasheet PDF File 1N1184AR PDF File

1N1184AR
1N1184AR

Overview
Silicon Standard Recovery Diode Features • High Surge Capability • Types up to 600 V VRRM • Not ESD Sensitive Note: 1.
Standard polarity: Stud is cathode.
2.
Reverse polarity (R): Stud is anode.
3.
Stud is base.
1N1183A thru 1N1190AR VRRM = 50 V - 600 V IF = 40 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N1183A(R) 1N1184A(R) 1N1186A(R) 1N1188A(R) 1N1190A(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC IF TC ≤ 150 °C 50 100 200 35 70 140 50 100 200 40 40 40 Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.
3 ms 800 800 800 400 600 V 280 420 V 400 600 V 40 40 A 800 800 A Operating temperature Tj Storage temperature Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C Electrical characteristics, at Tj = 25 °C, unless o...


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