DatasheetsPDF.com

2SK1167

Part Number	2SK1167
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Nov 23, 2020
Detailed Description	isc N-Channel MOSFET Transistor 2SK1167 ·FEATURES ·With TO-3PN packaging ·Low drain-source on-resistance: RDS(ON) =0.3...
Datasheet	2SK1167 PDF File

Overview

isc N-Channel MOSFET Transistor 2SK1167 ·FEATURES ·With TO-3PN packaging ·Low drain-source on-resistance: RDS(ON) =0.
36Ω (MAX) ·Enhancement mode: Vth = 3.
0 to 4.
0V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·DC-DC converters ·Uninterruptible power supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 450 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Pulsed 60 A PD Total Dissipation 100 W Tj Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.
25 UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 2SK1167 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYM...

Similar Datasheet

2SK11 (2SK11x) N-CHANNEL JFET TRANSISTOR - Toshiba
2SK1101-01MR N-CHANNEL SILICON POWER MOS-FET - Fuji Electric
2SK1102-01M N-CHANNEL SILICON POWER MOS-FET - ETC
2SK1102-01MR N-CHANNEL SILICON POWER MOS-FET - ETC
2SK1103 Silicon N-Channel Junction FET - Panasonic Semiconductor
2SK1104 Silicon N-Channel Junction FET - Panasonic Semiconductor
2SK1105 N-Channel MOSFET - INCHANGE
2SK1105-R N-Channel Silicon Power MOSFET - Fuji Electric
2SK1113 Field Effect Transistor - Toshiba
2SK1115 Silicon N-Channel MOSFET - ETC

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)