DatasheetsPDF.com

STP11NM60ND

Part Number	STP11NM60ND
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Dec 8, 2020
Detailed Description	isc N-Channel MOSFET Transistor STP11NM60ND FEATURES ·Drain Current –ID= 6.3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 6...
Datasheet	STP11NM60ND PDF File

Overview

isc N-Channel MOSFET Transistor STP11NM60ND FEATURES ·Drain Current –ID= 6.
3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
45Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 6.
3 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 90 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTER...

Similar Datasheet

STP11NM60 N-CHANNEL Power MOSFET - ST Microelectronics
STP11NM60 N-Channel MOSFET - INCHANGE
STP11NM60A N-CHANNEL Power MOSFET - ST Microelectronics
STP11NM60AFP N-CHANNEL Power MOSFET - ST Microelectronics
STP11NM60FD N-CHANNEL Power MOSFET - ST Microelectronics
STP11NM60FD N-Channel MOSFET - INCHANGE
STP11NM60FDFP N-CHANNEL Power MOSFET - ST Microelectronics
STP11NM60FDFP N-Channel MOSFET - INCHANGE
STP11NM60FP N-CHANNEL Power MOSFET - ST Microelectronics
STP11NM60FP N-Channel MOSFET - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)