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8050

Fairchild Semiconductor
Part Number 8050
Manufacturer Fairchild Semiconductor
Description NPN Transistor
Published Dec 23, 2020
Detailed Description SS8050 — NPN Epitaxial Silicon Transistor November 2014 SS8050 NPN Epitaxial Silicon Transistor Features • 2 W Output...
Datasheet PDF File 8050 PDF File

8050
8050

Overview
SS8050 — NPN Epitaxial Silicon Transistor November 2014 SS8050 NPN Epitaxial Silicon Transistor Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation.
• Complimentary to SS8550 • Collector Current: IC = 1.
5 A 1 TO-92 1.
Emitter 2.
Base 3.
Collector Ordering Information Part Number SS8050BBU SS8050CBU SS8050CTA SS8050DBU SS8050DTA Top Mark S8050 S8050 S8050 S8050 S8050 Package TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L Packing Method Bulk Bulk Ammo Bulk Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device.
The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Unit VCBO VCEO VEBO IC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature 40 V 25 V 6 V 1.
5 A 150 °C -65 to 150 °C © 2004 Fairchild Semiconductor Corporation SS8050 Rev.
1.
1.
0 www.
fairchildsemi.
com SS8050 — NPN Epitaxial Silicon Transistor Thermal Characteristics(1) Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Unit Power Dissipation PD Derate Above 25°C 1 W 8 mW/°C RθJA Thermal Resistance, Junction-to-Ambient 125 °C/W Note: 1.
PCB size: FR-4, 76 mm x 114 mm x 1.
57 mm (3.
0 inch x 4.
5 inch x 0.
062 inch) with minimum land pattern size.
Electrical Characteristics Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Conditions Min.
BVCBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 40 BVCEO Collector-Emitter Breakdown Voltage IC = 2 mA, IB = 0 25 BVEBO Emitter-Base Breakdown Voltage IE = 100 μA, IC = 0 6 ICBO Collector ...


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