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2SC4627G Datasheet PDF


Part Number 2SC4627G
Manufacturer Panasonic
Title Silicon NPN Transistor
Description Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC4627G Silicon NPN epitaxial planar type For high-frequency ampli...
Features
■ Package
• Optimum for RF amplification of FM/AM radios
• Code
• High transition frequency fT SSMini3-F3
• SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing /
■ Absolute Maximum Ratings Ta = 25°C
• Marking Symbol: U
• Pin Name 1. Base...

File Size 255.96KB
Datasheet 2SC4627G PDF File








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2SC4627 : Production specification NPN High-frequency Transistor FEATURES  Optimum for RF amplification of FM/AM radios. Pb Lead-free  High requency voltage fT.  SS-Mini type package,allowing downsizing of The equipment and automatic insertion through the type. APPLICATIONS  General purpose switching and amplification. ORDERING INFORMATION Type No. Marking 2SC4627 U 2SC4627 SOT-523 Package Code SOT-523 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 30 Units V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3V IC Collector Current -Continuous 15 mA PC Collector Dissipation 125 mW Tj,Tstg Junction a.

2SC4627 : Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.6±0.15 s Features q q q 0.4 0.8±0.1 0.4 0.2–0.05 0.15–0.05 +0.1 Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 0.45±0.1 0.3 0.75±0.15 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25˚C) Ratings 30 20 3 15 125 125 –55 ~ +1.

2SC4627J : Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC4627J Silicon NPN epitaxial planar type 0.80±0.05 For high-frequency amplification 1.60+–00..0035 1.00±0.05 Unit: mm 0.12+–00..0013 ■ Features 3 (0.375) 0.85–+00..0035 1.60±0.05 5˚ • Optimum for RF amplification of FM/AM radios • High transition frequency fT 12 (0.80) • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 0.27±0.02 (0.50)(0.50) 5˚ / ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 30 0 to 0.02 0.70–+00..0035 V 0.10 max. c e. d ty Collector-emitter volta.




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