DatasheetsPDF.com

2N5665

INCHANGE
Part Number 2N5665
Manufacturer INCHANGE
Description Silicon NPN Power Transistor
Published Mar 12, 2021
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=300V(Min) ·Minimum Lot-to-Lot...
Datasheet PDF File 2N5665 PDF File

2N5665
2N5665


Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=300V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 2.
5 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N5665 isc website： www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Collector-Emitter Breakdown Voltage IB=10uA ICBO Collector-Base Cutoff Current VCB= 300V ICEO Collector-Emitter Cutoff Current VCE= 300V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=3A; IB= 0.
6A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 3A; IB= 0.
6A VBE(sat)-2 Base-Emitter Saturation Voltage IC=5A; IB= 1A hFE-1 DC Current Gain IC=500mA; VCE= 2V hFE-2 DC Current Gain IC=1A; VCE= 5V hFE-3 DC Current Gain IC=3A; VCE= 5V hFE-4 DC Current Gain IC=5A; VCE= 5V 2N5665 MIN TYP.
MAX UNIT 6 V 0.
1 uA 0.
2 uA 0.
4 V 1 V 1.
2 V 1.
5 V 25 25 75 10 5 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend o...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)