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2N6280

Part Number	2N6280
Manufacturer	INCHANGE
Title	Silicon NPN Power Transistor
Description	·Collector-Emitter Breakdown Voltage- : VCEO=140V(Min) ·Minimum Lot-to-Lot variations for robust dev...
Features	age IC=20A; IB= 2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50A; IB= 10A VBE(sat)-1 Base-Emitter Saturation...
Published	Mar 12, 2021
Datasheet	2N6280 PDF File

Features

age IC=20A; IB= 2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50A; IB= 10A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 20A; IB= 2A VBE(sat)-2 Base-Emitter Saturation Voltage IC=50A; IB= 10A hFE-1 DC Current Gain IC=1A; VCE= 4V hF...

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