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B817C

ON Semiconductor
Part Number B817C
Manufacturer ON Semiconductor
Description Bipolar Transistor
Published Apr 2, 2021
Detailed Description Ordering number : ENA0188B 2SB817C Bipolar Transistor –140V, –12A, Low VCE(sat) PNP TO-3P-3L http://onsemi.com Feature...
Datasheet PDF File B817C PDF File

B817C
B817C

Overview
Ordering number : ENA0188B 2SB817C Bipolar Transistor –140V, –12A, Low VCE(sat) PNP TO-3P-3L http://onsemi.
com Features • Large current capacitance • Wide SOA and high durability against breakdown • Adoption of MBIT process Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C Conditions Ratings Unit -160 V -140 V --6 V --12 A --20 A 2.
5 W 120 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
18.
4 Package Dimensions unit : mm (typ) 7539-001 15.
6 4.
8 1.
5 2SB817C-1E 3.
2 7.
0 5.
0 19.
9 13.
6 10.
0 16.
76 Product & Package Information • Package : TO-3P-3L • JEITA, JEDEC : SC-65, TO-247, SOT-199 • Minimum Packing Quantity : 30 pcs.
/tube Marking B817C LOT No.
Electrical Connection 2 1 3.
5 20.
0 2.
0 3 3.
0 1.
0 0.
6 123 1.
4 5.
45 5.
45 1 : Base 2 : Collector 3 : Emitter TO-3P-3L Semiconductor Components Industries, LLC, 2013 January, 2014 12214 TKIM TC-00003086/N0508 MSIM TC-00001683/13106DA MSIM TB-00001810 No.
A0188-1/4 2SB817C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Base to Emitter Voltage Collector to Emitter Saturation Voltage Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol Conditions ICBO IEBO hFE1 hFE2 fT Cob VBE VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf VCB=--160V, IE=0A VEB=--4V, IC=0A VCE=--5V...


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