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026M

H&M Semiconductor
Part Number 026M
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Apr 12, 2021
Detailed Description HM2302 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2302 uses advanced trench technology to provide excell...
Datasheet PDF File 026M PDF File

026M
026M


Overview
HM2302 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
GENERAL FEATURES ● VDS = 20V,ID = 2.
9A RDS(ON) < 59mΩ @ VGS=2.
5V RDS(ON) < 45mΩ @ VGS=4.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram 3D 026M G1 2S Marking and pin Assignment Application ●Battery protection ●Load switch ●Power management SOT-23 top view Package Marking And Ordering Information Device Marking Device D...



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