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B1399

Hitachi Semiconductor
Part Number B1399
Manufacturer Hitachi Semiconductor
Description Silicon PNP Transistor
Published Dec 12, 2021
Detailed Description 2SB1399 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 123 1. Base 2. Collecto...
Datasheet PDF File B1399 PDF File

B1399
B1399

Overview
2SB1399 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 123 1.
Base 2.
Collector 3.
Emitter 2 1 ID 1.
0 kΩ (Typ) 200 Ω (Typ) 3 2SB1399 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1.
Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC IC (peak) PC PC * 1 Tj Tstg ID*1 Ratings Unit –120 V –120 V –7 V –10 A –15 A 2 W 30 150 °C –55 to +150 °C 10 A Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Collector to base breakdown V(BR)CBO –120 — voltage Collector to emitter breakdown V(BR)CEO –120 — voltage Emitter to base breakdown V(BR)EBO –7 — voltage Collector cutoff current I CBO — — I CEO — — DC current transfer ratio hFE 1000 — Collector to emitter saturation VCE (sat)1 — — voltage VCE (sat)2 — — Base to emitter saturation VBE (sat)1 — — voltage VBE (sat)2 — — C to E diode forward voltage VD — — Note: 1.
Pulse Test.
See switching characteristic curve of 2SB955(K).
Max Unit — V — V — V –10 µA –10 20000 –1.
5 V –3.
0 –2.
0 V –3.
5 3.
0 V Test Conditions IC = –0.
1 mA, IE = 0 IC = –25 mA, RBE = ∞ IE = –50 mA, IC = 0 VCB = –100 V, IE = 0 VCE = –100 V, RBE = ∞ VCE = –3 V, IC = –5 A*1 IC = –5 A, IB = 10 mA*1 IC = –10 A, IB = –100 mA*1 IC = –5 A, IB = 10 mA*1 IC = –10 A, IB = –100 mA*1 ID = 10 A*1 2 Collector power dissipation Pc (W) Maximum Collector Dissipation Curve 30 20 10 0 50 100 150 Case Temperature TC (°C) Typical Output Characteristics = 30 W PC –10 TC = 25°C –8 –2.
0 –1.
8 –1.
6 –1.
4 –1.
2 –6 –1.
0 –0.
8 –4 –0.
6 –2 –0.
4 mA IB = 0 0 –1.
0 –2 –3 –4 –5 Collector to emitter Voltage VCE (V) DC current transfer ratio hFE Collector Current IC (A) 2SB1399 1 µs 100 µs PW 1 = ms 10 ms Operation (T C DC Area of Safe Operation ...


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