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2SK2736

Renesas
Part Number 2SK2736
Manufacturer Renesas
Description Silicon N-Channel MOSFET
Published Dec 13, 2021
Detailed Description 2SK2736 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 20 mΩ typ. (VGS = 10...
Datasheet PDF File 2SK2736 PDF File

2SK2736
2SK2736

Overview
2SK2736 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 20 mΩ typ.
(VGS = 10 V, ID = 15 A) • 4 V gate drive devices.
• High speed switching Outline REJ03G1030-0200 (Previous: ADE-208-544) Rev.
2.
00 Sep 07, 2005 RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM) D G 1.
Gate 2.
Drain 3.
Source 12 3 S Rev.
2.
00 Sep 07, 2005 page 1 of 6 2SK2736 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C Symbol VDSS VGSS ID ID(...


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