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1N914BWS

ON Semiconductor
Part Number 1N914BWS
Manufacturer ON Semiconductor
Description Small-Signal Diodes
Published Dec 16, 2021
Detailed Description Small Signal Diodes 1N4148WS, 1N4448WS, 1N914BWS Features • General Purpose Diodes • Fast Switching Device (TRR < 4.0 ...
Datasheet PDF File 1N914BWS PDF File

1N914BWS
1N914BWS

Overview
Small Signal Diodes 1N4148WS, 1N4448WS, 1N914BWS Features • General Purpose Diodes • Fast Switching Device (TRR < 4.
0 ns) • Very Small and Thin SMD Package • Moisture Level Sensitivity 1 • Matte Tin (Sn) Lead Finish • Green Mold Compound • These Devices are Pb−Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Non−Repetitive Peak Reverse Voltage Repetitive Peak Reverse Voltage Repetitive Peak Forward Current Continuous Forward Current Non−repetitive Peak Forward Surge Current Pulse Width = 1.
0 s Pulse Width = 1.
0 ms VRSM VRRM IFRM IO IFSM 100 V 75 V 300 mA 150 mA A 1.
0 4.
0 Operating Junction Temperature TJ +150 °C Storage Temperature Range TSTG −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
www.
onsemi.
com T 2 SOD−323FL (Flat Lead) CASE 477AB 1 Band Indicates Cathode ELECTRICAL SYMBOL (1) Cathode (2) Anode DEVICE MARKING INFORMATION See general marking information in the device marking section on page 3 of this data sheet.
ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet.
THERMAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.
) Symbol Parameter PD Power Dissipation (TC = 25°C) RqJA Thermal Resistance, Junction−to−Ambient (Note 1) 1.
Device mounted on FR−4 PCB minimum land pad.
Value 200 500 Unit mW °C/W ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.
) Symbol Parameter Conditions Min Max Unit BVR Breakdown Voltage IR = 100 mA 100 − V IR = 5 mA 75 − IR Reverse Current VR = 20 V − 25 nA VR = 75 V − 5 mA VF Forward Voltage 1N4448WS / 1N914BWS IF = 5 mA 0.
62 0.
72 V 1N4148WS IF = 10 mA − 1 1N4448WS / 1N914BWS IF = 100 mA − 1 CO Diode Capacitance VR = 0, f = 1.
0 MHz − 4 pF TRR Reverse ...


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