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ESH1C

Taiwan Semiconductor
Part Number ESH1C
Manufacturer Taiwan Semiconductor
Description Ultra-Fast Rectifier
Published May 10, 2022
Detailed Description ESH1B – ESH1D Taiwan Semiconductor 1A, 100V - 200V Ultra Fast Surface Mount Rectifier FEATURES ● Glass passivated chip...
Datasheet PDF File ESH1C PDF File

ESH1C
ESH1C

Overview
ESH1B – ESH1D Taiwan Semiconductor 1A, 100V - 200V Ultra Fast Surface Mount Rectifier FEATURES ● Glass passivated chip junction ● Ideal for automated placement ● Low profile package ● Ultra Fast recovery time for high efficiency ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● Lighting application ● Snubber ● Freewheeling application KEY PARAMETERS PARAMETER VALUE UNIT IF VRRM 1 A 100 - 200 V IFSM TJ MAX Package 30 A 175 °C DO-214AC (SMA) Configuration Single die MECHANICAL DATA ● Case: DO-214AC (SMA) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.
060g (approximately) DO-214AC (SMA) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL ESH1B ESH1C ESH1D Marking code on the device ESH1B ESH1C ESH1D Repetitive peak reverse voltage VRRM 100 150 200 Reverse voltage, total rms value VR(RMS) 70 105 140 Forward current Peak forward surge current, 8.
3ms single half sine-wave superimposed on rated load Junction temperature Storage temperature IF IFSM TJ TSTG 1 30 - 55 to +175 - 55 to +175 UNIT V V A A °C °C 1 Version: F2102 ESH1B – ESH1D Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-lead thermal resistance Junction-to-ambient thermal resistance SYMBOL RӨJL RӨJA TYP 35 85 UNIT °C/W °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage(1) CONDITIONS IF = 1A, TJ = 25°C SYMBOL VF Reverse current @ rated VR(2) TJ = 25°C IR TJ = 125°C Junction capacitance Reverse recovery time Notes: 1.
Pulse test with PW = 0.
3ms 2.
Pulse test with PW = 30ms 1MHz, VR = 4.
0V CJ IF = 0.
5A, IR = 1.
0A, Irr = 0.
25A trr TYP 16 - MAX 0.
9 1 25 - 15 UNIT V µA µA pF ns ORDERING ...


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