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3DA76

Part Number	3DA76
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Sep 11, 2022
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 15(Max) @IC= 0.3A ·Excellent Safe Operating ...
Datasheet	3DA76 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 15(Max) @IC= 0.
3A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as an output device in complementary audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 4.
0 V IC Collector Current-Continuous 0.
5 A PC Collector Power Dissipation@TC=75℃ 7.
5 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -55-175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 5.
0...

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