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FDMC86183

ON Semiconductor
Part Number FDMC86183
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Feb 5, 2023
Detailed Description MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 100 V, 47 A, 12.8 mW FDMC86183 General Description This N−Channel MV MOS...
Datasheet PDF File FDMC86183 PDF File

FDMC86183
FDMC86183


Overview
MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 100 V, 47 A, 12.
8 mW FDMC86183 General Description This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.
This process has been optimized to minimise on−state resistance and yet maintain superior switching performance with best in class soft body diode.
Features • Shielded Gate MOSFET Technology • Max RDS(on) = 12.
8 mW at VGS = 10 V, ID = 16 A • Max RDS(on) = 34.
6 mW at VGS = 6 V, ID = 8 A • 50% Lower Qrr than Other MOSFET Suppliers • Lowers Switching Noise/EMI • MSL1 Robust Package Design • 100% UIL Tested • Pb−Free, Halide Free and RoHS Compliant Applications • Primary DC−D...



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