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BC807-40W


Part Number BC807-40W
Manufacturer Rectron
Title Silicon PNP Transistor
Description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actua...
Features itter Current ICES 9CE=-25V IB=0 Emitter Cutoff Current IEBO 9EB=-4V IC=0 DC Current Gain HFE (1) 9CE=-1V IC=-100mA  HFE (2) 9CE=-1V IC=-500mA  Collector-Emitter Saturation Voltage VCE(sat) ,C=-500mA IB=-50mA Collector-Base Saturation Voltage transition frequency VBE(sat) ,C=-5...

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BC807-40 : ·High current(max. 500mA) ·Low Voltage(Min. 45V) ·NPN complement BC817-25 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose switching and amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature VALUE -50 -45 -5 -0.5 0.25 150 -65~150 UNIT V V V A W ℃ ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark GE Semiconductor isc Silicon PNP General Purpose Transistors ELECTRICAL CHARAC.

BC807-40 : PNP general-purpose transistors. Table 1. Product overview Type number Package NXP BC807 SOT23 BC807W SOT323 BC327[1] SOT54 (TO-92) JEITA SC-70 SC-43A [1] Also available in SOT54A and SOT54 variant packages (see Section 2). NPN complement BC817 BC817W BC337 1.2 Features „ High current „ Low voltage 1.3 Applications „ General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC ICM hFE Quick reference data Parameter Conditions collector-emitter voltage collector current (DC) open base; IC = 10 mA peak collector current DC current gain BC807; BC807W; BC327 IC = −100 mA; VCE = −1 V BC807-16; BC807-16W; BC327-16 BC807-25; BC807-25W; BC32.

BC807-40 : PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package Nexperia BC807 SOT23 BC807-16 BC807-25 BC807-40 JEDEC TO-236AB JEITA - NPN complement BC817 BC817-16 BC817-25 BC817-40 1.2 Features and benefits • High current • Three current gain selections • AEC-Q101 qualified 1.3 Applications • General-purpose switching and amplification Nexperia BC807 series 45 V, 500 mA PNP general-purpose transistors 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions VCEO IC ICM collector-emitter voltage collector current peak.

BC807-40 : Features • Ideally Suited for Automatic Insertion • Epitaxial Planar Die Construction • Complementary NPN Types Available (BC817) • For switching and AF Amplifier Applications • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. "Green" Device (Note 3) • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ BC807-16/-25/-40 45V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Mechanical Data • Case: SOT23 • Case Material: Molded Plastic, “Green” Mo.

BC807-40 : CODE G Green compound G Green compound G Green compound Document Number: DS_S1404007 Version: F14 Small Signal Product DIMENSIONS A F B C D E G BC807-16/-25/-40 Taiwan Semiconductor DIM. A B C D E F G H Unit (mm) Min Max 2.70 3.10 1.10 1.50 0.30 0.51 1.78 2.04 2.10 2.64 0.89 1.30 0.55 REF 0.1 REF Unit (inch) Min Max 0.106 0.122 0.043 0.059 0.012 0.020 0.070 0.080 0.083 0.104 0.035 0.051 0.022 REF 0.004 REF SUGGEST PAD LAYOUT Document Number: DS_S1404007 DIM. A B C D Unit (mm) Typ. 0.95 2.0 0.9 0.8 Unit (inch) Typ. 0.037 0.079 0.035 0.031 Version: F14 Small Signal Product Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change with.

BC807-40 : UNISONIC TECHNOLOGIES CO., LTD BC807/BC808 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS  FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to BC817 / BC818  ORDERING INFORMATION Ordering Number Package Note: BC807G-xx-AE3-R BC807G-xx-AL3-R BC808G-xx-AE3-R BC808G-xx-AL3-R Pin Assignment: C: Collector B: Base SOT-23 SOT-323 SOT-23 SOT-323 E: Emitter Pin Assignment 123 EBC EBC EBC EBC Packing Tape Reel Tape Reel Tape Reel Tape Reel  MARKING 807-16 808-16 9GAG 807-25 808-25 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 807-40 808-40 1 of 4 QW-R206-026.F BC807/BC808 PNP SILICON TRANSISTOR  ABSOLUTE MAXIMUM.

BC807-40 : PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817.../W, BC818.../W (NPN) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BC807.../BC808... Type BC807-16 BC807-16W BC807-25 BC807-25W BC807-40 BC807-40W BC808-25 BC808-25W BC808-40 BC808-40W Marking Pin Configuration 5As 1 = B 2 = E 3 = C - - 5As 1 = B 2 = E 3 = C - - 5Bs 1 = B 2 = E 3 = C - - 5Bs 1 = B 2 = E 3 = C - - 5Cs 1 = B 2 = E 3 = C - - 5Cs 1 = B 2 = E 3 = C - - 5Fs 1 = B 2 = E 3 = C - - 5Fs 1 = B 2 = E 3 = C - - 5Gs 1 = B 2 = E 3 = C - - 5Gs 1 = B 2 = E 3 = C - - 1Pb-cont.

BC807-40H : PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package Nexperia BC807-16H SOT23 BC807-25H BC807-40H JEDEC TO-236AB NPN comlement BC817K-16H BC817K-25H BC817K-40H 1.2. Features and benefits • Three current gain selections • High-temperature applications up to 175 °C • AEC-Q101 qualified 1.3. Applications • General-purpose switching and amplification 1.4. Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions VCEO collector-emitter voltage open base IC collector current ICM peak collector current single pulse; tp.

BC807-40L : General Purpose Transistors PNP Silicon BC807-16L, BC807-25L, BC807-40L Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS VCEO VCBO VEBO IC −45 −50 −6.0 −500 V V V mAdc Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, PD (Note 1) TA = 25°C Derate above 25°C 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient.

BC807-40L : PNP general-purpose transistors in a small SOT23 (TO-236AB) or SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number BC807-16L BC807-25L BC807-40L BC807-16LW BC807-25LW BC807-40LW Package Nexperia SOT23 SOT323 JEITA - SC70 JEDEC TO-236AB - 1.2 Features and benefits • High current • Three current gain selections • AEC-Q101 qualified 1.3 Applications • General-purpose switching and amplification 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions VCEO collector-emitter voltage open base IC collector current ICM peak collector current single pulse; tp ≤ 1 ms Min .

BC807-40LT1 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC807–16LT1/D General Purpose Transistors PNP Silicon 2 BASE 1 EMITTER Symbol VCEO VCBO VEBO IC Value –45 –50 –5.0 –500 Unit V V V mAdc COLLECTOR 3 BC807-16LT1 BC807-25LT1 BC807-40LT1 3 1 2 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Ju.

BC807-40LW : PNP general-purpose transistors in a small SOT23 (TO-236AB) or SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number BC807-16L BC807-25L BC807-40L BC807-16LW BC807-25LW BC807-40LW Package Nexperia SOT23 SOT323 JEITA - SC70 JEDEC TO-236AB - 1.2 Features and benefits • High current • Three current gain selections • AEC-Q101 qualified 1.3 Applications • General-purpose switching and amplification 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions VCEO collector-emitter voltage open base IC collector current ICM peak collector current single pulse; tp ≤ 1 ms Min .

BC807-40QA : 500 mA PNP general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Table 1. Product overview Type number Package Nexperia BC807-25QA BC807-40QA DFN1010D-3 (SOT1215) JEITA - NPN complement BC817-25QA BC817-40QA 1.2 Features and benefits  General-purpose transistor  Two current gain selections  Low package height of 0.37 mm  AEC-Q101 qualified 1.3 Applications  General-purpose switching and amplification  Mobile applications 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - .

BC807-40W : PNP transistor in a SOT323 plastic package. NPN complement: BC817W. MARKING TYPE NUMBER BC807W BC807-16W Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) 5D∗ 5A∗ TYPE NUMBER BC807-25W BC807-40W MARKING CODE(1) 5B∗ 5C∗ 1 Top view 2 MAM048 BC807W PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, halfpage 3 3 1 2 Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) .

BC807-40W : Small Signal Product BC807-16W/-25W/-40W Taiwan Semiconductor 200mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS complian - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code MECHANICAL DATA - Case: SOT- 323 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260°C/10s - Weight: 0.005 grams (approximately) SOT-323 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherw.

BC807-40W : General Purpose Transistors PNP Silicon BC807-25W, BC807-40W Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS VCEO VCBO VEBO IC −45 −50 −5.0 −500 V V V mAdc Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Thermal Resistance, Junction−to−Ambient PD RqJA 460 mW 272 °C/W Junction and Storage Tempe.




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