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S15JC Datasheet PDF

Taiwan Semiconductor
Part Number S15JC
Manufacturer Taiwan Semiconductor
Title 400V - 1000V Surface Mount Rectifier
Description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and condi...
Features
● Glass passivated chip junction
● Low forward voltage drop
● Ideal for automated placement
● High surge current capability
● Moisture sensitivity level: level 1, per J-STD-020
● RoHS Compliant
● Halogen-free according to IEC 61249-2-21 APPLICATIONS
● Freewheeling application
● Switching mode conver...

File Size 419.59KB
Datasheet PDF File S15JC PDF File


S15JC S15JC S15JC




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S150JR : Silicon Standard Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. S150J thru S150QR VRRM = 600 V - 1200 V IF =150 A AC DO-8 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions S150J (R) S150K (R) S150M (R) S150Q (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg.

S150K : Silicon Standard Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. S150J thru S150QR VRRM = 600 V - 1200 V IF =150 A AC DO-8 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions S150J (R) S150K (R) S150M (R) S150Q (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg.

S150KR : Silicon Standard Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. S150J thru S150QR VRRM = 600 V - 1200 V IF =150 A AC DO-8 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions S150J (R) S150K (R) S150M (R) S150Q (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg.

S150M : Silicon Standard Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. S150J thru S150QR VRRM = 600 V - 1200 V IF =150 A AC DO-8 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions S150J (R) S150K (R) S150M (R) S150Q (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg.

S150MR : Silicon Standard Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. S150J thru S150QR VRRM = 600 V - 1200 V IF =150 A AC DO-8 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions S150J (R) S150K (R) S150M (R) S150Q (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg.

S150Q : Silicon Standard Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. S150J thru S150QR VRRM = 600 V - 1200 V IF =150 A AC DO-8 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions S150J (R) S150K (R) S150M (R) S150Q (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg.

S150QR : Silicon Standard Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. S150J thru S150QR VRRM = 600 V - 1200 V IF =150 A AC DO-8 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions S150J (R) S150K (R) S150M (R) S150Q (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg.

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