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BSC007N04LS6

Infineon

MOSFET

BSC007N04LS6 MOSFET OptiMOSTM6Power-Transistor,40V Features •Optimizedforsynchronousapplication •Verylowon-r...


Infineon

BSC007N04LS6

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BSC007N04LS6 MOSFET OptiMOSTM6Power-Transistor,40V Features Optimizedforsynchronousapplication Verylowon-resistanceRDS(on) 100%avalanchetested Superiorthermalresistance N-channel Pb-freeleadplating;RoHScompliant Halogen-freeaccordingtoIEC61249-2-21 175°Crated Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 0.7 mΩ ID 381 A Qoss 103 nC QG(0V..10V) 94 nC QG(0V..4.5V) 45 nC PG-TDSON-8 8 7 6 5 5 6 7 8 Pin 1 2 3 4 4 3 2 1 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type/OrderingCode BSC007N04LS6 Package PG-TDSON-8 FL Marking 07N04LS6 RelatedLinks - Final Data Sheet 1 Rev.2.3,2022-08-29 OptiMOSTM6Power-Transistor,40V BSC007N04LS6 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....




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