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BD708 Datasheet PDF


Part Number BD708
Manufacturer STMicroelectronics
Title COMPLEMENTARY SILICON POWER TRANSISTORS
Description The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec TO-220 plastic package. They are intented for use in power li...
Features 0 BD711 BD712 100 100 100 Un it V V V V A A A W oC oC 1/6 BD707/708/709/711/712 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-case Thermal Resistance Junction-ambient Max Max 1.67 70 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l Pa ...

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Datasheet BD708 PDF File








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BD706 : ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -45V(Min.) ·Complement to Type BD705 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCES Collector-Emitter Voltage VBE= 0 -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 75 W 150 ℃ Tstg Storage T.

BD707 : The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The BD707 and BD711 complementary PNP types are BD708 and BD712 respectively. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Sy mb o l Parameter VCBO Collector-Base Voltage (IE = 0) VCER Collector-Emitter Voltage (VBE = 0) VCEO Collector-Emitter Voltage (IB = 0) VEBO Emitter-Base Voltage (IC = 0) IC Collector Current ICM Collector Peak Current IB Base Current Ptot Total Dissipation at Tc ≤ 25 oC Tstg Storage Temperature Tj Max. Operating Junction Temperature For PNP types voltage.

BD707 : ·With TO-220C package www.datasheet4u.com ·The BD707 and BD711are respectively complement to type BD708 and BD712 APPLICATIONS ·Intented for use in power linear and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD707 BD709 BD711 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER BD707 VCBO Collector-base voltage BD709 BD711 BD707 VCEO Collector-emitter voltage BD709 BD711 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current Total dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 60 80 100 60 80 100 5 12 18 5 75 150 -65~.

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BD708 : ·With TO-220C package www.datasheet4u.com ·Complement to type BD707/709/711 APPLICATIONS ·Intented for use in power linear and switching applications. PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION BD708 BD710 BD712 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER BD708 VCBO Collector-base voltage BD710 BD712 BD708 VCEO Collector-emitter voltage BD710 BD712 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current Total dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -60 -80 -100 -60 -80 -100 -5 -12 -18 -5 75 150 -65~150 V A A A W V V UNIT THER.

BD708 : ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min.) ·Complement to Type BD707 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCES Collector-Emitter Voltage VBE= 0 -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 75 W 150 ℃ Tstg Storage T.

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