| Part Number | CMPA2060035F1 |
| Manufacturer | MACOM |
| Title | Power Amplifier |
| Description | The CMPA2060035F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN ha... |
| Features |
Applications
• 30% typical power added • Civil and military pulsed radar efficiency amplifiers 1 • 30 dB small signal gain • Test instrumentation 4 • 36 W typical PSAT • Electronic warfare jamming 2 5 • Operation up to 28 V • High breakdown voltage 6 3 • High temperature operation ... |
| File Size | 1.81MB |
| Datasheet |
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CMPA2060035F : The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier enabling very wide bandwidths to be achieved in a small footprint screw-down package featuring a Copper-Tungsten heat-sink. PN : CMPA2060035F Package Type : 440219 Typical Performance Over 2.0-6.0 GHz, 28 V (TC = 25ºC) .