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CGHV1F025S

MACOM
Part Number CGHV1F025S
Manufacturer MACOM
Title GaN HEMT
Description The CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gai...
Features
• Up to 15 GHz Operation
• 25 W Typical Output Power
• 11 dB Gain at 9.4 GHz
• Application circuit for 8.9 - 9.6 GHz Large Signal Models Available for ADS and MWO 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to mak...

Published May 13, 2024
Datasheet PDF File CGHV1F025S PDF File


CGHV1F025S
CGHV1F025S


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