2SC2712

2SC2710 : TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2710 2SC2710 For Audio Amplifier Applications Unit: mm · High DC current gain: hFE (1) = 100~320 · Complementary to 2SA1150 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 35 30 5 800 160 300 150 -55~150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current g.

2SC2710 : TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package. / Features , 2SA1150 。 High DC current gain, complementary pair with 2SA1150. / Applications 。 Audio amplifier applications. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range O 100~200 Y 160~320 http://www.fsbrec.com 1/6 2SC2710 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Base Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO .

2SC2712 : Bipolar Transistors Silicon NPN Epitaxial Type 2SC2712 1. Applications • Low-Frequency Amplifiers • Audio Frequency General Purpose Amplifier Applications • AM Amplifiers 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: VCEO = 50 V (3) High collector current: IC = 150 mA (max) (4) High hFE: hFE = 70 to 700 (5) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) (6) Low noise: NF = 1 dB (typ.), 10 dB (max) (7) Complementary to 2SA1162 3. Packaging 2SC2712 S-Mini 1: Base 2: Emitter 3: Collector ©2021-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1982-10 2022-02-03 Rev.7.0 4. Or.

2SC2712 : Production specification Silicon Epitaxial Planar Transistor FEATURES  Low noise：NF=1dB (Typ.),10 dB(Max)  Complementary to 2SA1162 Pb Lead-free  High voltage and high current  Excellent hFE linearity 2SC2712 APPLICATIONS  Audio frequency general purpose amplifier applications SOT-23 ORDERING INFORMATION Type No. Marking 2SC2712 LO/LY/LG/LL Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 50 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 150 IB Base current 30 PC Collector Dissipation 150 Tj,Tstg Junction and Storage Temperature -55.

2SC2712 : ·With SOT-23 packaging ·High collector-base voltage ·High power dissipation ·Low saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.15 A 0.15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2712 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL .

2SC2712 : UNISONIC TECHNOLOGIES CO., LTD 2SC2712 AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current : VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise 3 NPN SILICON TRANSISTOR 1 2 SOT-23 *Pb-free plating product number: 2SC2712L ORDERING INFORMATION Order Number Package Normal Lead Free Platingwww.DataSheet4U.com 2SC2712-x-AE3-R 2SC2712L-x-AE3-R SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel 2SC2712L-x-AE3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) R: Tape Reel (2) AE3: SOT-23 (3) x: refer to Classification of hFE (4) L: Lead Free Plating, Blank: Pb/Sn MARKING LO 2SC2712-O .

2SC2712 : 2SC2712 3 1 2 SOT-23 www.DataSheet4U.com WEITRON http://www.weitron.com.tw 2SC2712 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC= 2 mAdc, VCE= 6.0 Vdc) Collector-Emitter Saturation Voltage (IC= 100 mAdc, IB= 10mAdc) Output Capacitance (VCB =10Vdc, I E =0A, f=1MHZ) Transition Frequency (IC= 1 mAdc, VCE=10 Vdc) hFE VCE(sat) 70 - 0.1 700 0.25 Vdc PF Cob fT 80 2.0 - 3.5 - MHz CLASSIFICATION OF hFE Rank Range Marking O 70-140 LO Y 120-240 LY GR 200-400 LG BL 350-700 LL WEITRON http://www.weitron.com.tw 2SC2712 FIG1. FIG2. FIG3. FIG4. FIG5. FIG6. WEITRON http//www..

2SC2712 : BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z z z Low noise：NF=1dB (Typ.),10 dB(Max). Complementary to 2SA1162. High voltage and high current. High hFE linearity. Production specification 2SC2712 Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23 ORDERING INFORMATION Type No. 2SC2712 Marking LO▪/LY▪/LG▪/LL▪ Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 60 50 5 150 150 -55~150 Units V V V mA mW ℃.

2SC2712 : SMD Type Silicon NPN Epitaxial Type Transistor 2SC2712 SOT-23 Transistors Unit: mm Features High voltage and high current: VCEO = 50 V, IC = 150 mA (max) +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low noise: NF = 1dB (typ.), 10dB (max) 0.55 High hFE: hFE = 70 700 +0.1 1.3-0.1 Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.) 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO.

2SC2712 : 2SC2712 Elektronische Bauelemente NPN Silicon General Purpose Transistor A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES *Power Dissipation PCM: 150 mW (Tamb=25 oC) *Collector Current ICM: 150 mA *Collector-Base Voltage V(BR)CBO: 60 V *Operating and Storage Junction Temperature Range TJ,TSTG: -55~+150 C *RoHS Compliant Product o 1 3 3 Collector Base Dim A B Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 1 2 Emitter C D G A L B S H J K L S V C 2 Top View G V All Dimension in mm K J D H ELECTRICAL CHARACTERISTICS (Tamb=25oC Parameter Collector-base breakdown voltage .

2SC2712 : only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such appl.

2SC2712 : 2SC2712 TRANSISTOR (NPN) FEATURE · Low Noise: NF=1 dB (Typ),10dB(MAX) · Complementary to 2SA1162 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 60 50 5 150 150 150 -55-150 Units V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current g.

2SC2712 : NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILATOR OF FM/VHF TUNER High Current Gain Bandwidth Product fT=600MHz 2SC2715 SOT-23 1 1. 2.4 1.3 3 2 1.BASE 2.EMITTER 3.COLLECTOR 2.9 1.9 0.95 0.95 0.4 Unit:mm ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Ta=25oC* Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Ic PD Tj Tstg Rating 30 15 5 50 225 150 -55~150 (Ta=25 oC) Unit V V V mA mW OC OC Electrical Characteristics (Ta=25 oC) Parameter Symbol MIN. TYP. MAX. Unit Condition Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage# Emitt.

2SC2712 : SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package.  / Features ，，，，。 High voltage, high current, high hFE, low noise, excellent hFE linearity. / Applications 。 Audio frequency general purpose amplifier applications. / Equivalent Circuit / Pinning 3 2 1 PIN1：Emitter PIN 2：Base PIN 3：Collector / hFE Classifications & Marking hFE Classifications Symbol hFE Range O 70～140 Y 120～240 Marking HLO HLY GR 200～400 HLG BL 350～700 HLL http://www.fsbrec.com 1/6 2SC2712 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Collector Power Dissip.

2SC2712 : Plastic-Encapsulate Transistors FEATURES Low Noise: NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162 2SC2712 (NPN) MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO 60 VCEO 50 VEBO 5 IC 150 PC 200 TJ 150 Tstg -55 to +150 Unit V V V mA mW 1. BASE 2. EMITTER 3. COLLECTO SOT-23 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC= 100μA, IE=0 60 V Collector-emitter breakdown v.

2SC2712-BL : MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL NPN Plastic-Encapsulate Transistors SOT-23 Features • • • • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Complementary to 2SA1162 Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 50 60 5.0 150 150 -55 to +.