RN1412

RN1410 : RN1410,RN1411 Bipolar Transistors Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1410,RN1411 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN2410,RN2411 3. Equivalent Circuit 4. Packaging and Pin Assignment S-Mini 1: Base 2: Emitter 3: Collector ©2021 1 Toshiba Electronic Devices & Sto.

RN1411 : RN1410,RN1411 Bipolar Transistors Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1410,RN1411 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN2410,RN2411 3. Equivalent Circuit 4. Packaging and Pin Assignment S-Mini 1: Base 2: Emitter 3: Collector ©2021 1 Toshiba Electronic Devices & Sto.

RN1413 : RN1412,RN1413 Bipolar Transistors Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1412,RN1413 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN2412,RN2413 3. Equivalent Circuit 4. Packaging and Pin Assignment S-Mini 1: Base 2: Emitter 3: Collector ©2021 1 Toshiba Electronic Devices & Sto.

RN1414 : RN1414~RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414,RN1415,RN1416 RN1417,RN1418 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2414~RN2418 Unit: mm Equivalent Circuit and Bias Resister Values Type No. RN1414 RN1415 RN1416 RN1417 RN1418 R1 (kΩ) 1 2.2 4.7 10 47 R2 (kΩ) 10 10 10 4.7 10 JEDEC EIAJ TOSHIBA Weight: 0.012g SC-236MOD SC-59 2-3F1A Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage RN1414~1418 RN1414 RN1415 Emitter-base voltage RN1416 RN1417 RN1418 .

RN1415 : RN1414~RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414,RN1415,RN1416 RN1417,RN1418 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2414~RN2418 Unit: mm Equivalent Circuit and Bias Resister Values Type No. RN1414 RN1415 RN1416 RN1417 RN1418 R1 (kΩ) 1 2.2 4.7 10 47 R2 (kΩ) 10 10 10 4.7 10 JEDEC EIAJ TOSHIBA Weight: 0.012g SC-236MOD SC-59 2-3F1A Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage RN1414~1418 RN1414 RN1415 Emitter-base voltage RN1416 RN1417 RN1418 .

RN1416 : RN1414~RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414,RN1415,RN1416 RN1417,RN1418 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2414~RN2418 Unit: mm Equivalent Circuit and Bias Resister Values Type No. RN1414 RN1415 RN1416 RN1417 RN1418 R1 (kΩ) 1 2.2 4.7 10 47 R2 (kΩ) 10 10 10 4.7 10 JEDEC EIAJ TOSHIBA Weight: 0.012g SC-236MOD SC-59 2-3F1A Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage RN1414~1418 RN1414 RN1415 Emitter-base voltage RN1416 RN1417 RN1418 .

RN1417 : RN1414~RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414,RN1415,RN1416 RN1417,RN1418 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2414~RN2418 Unit: mm Equivalent Circuit and Bias Resister Values Type No. RN1414 RN1415 RN1416 RN1417 RN1418 R1 (kΩ) 1 2.2 4.7 10 47 R2 (kΩ) 10 10 10 4.7 10 JEDEC EIAJ TOSHIBA Weight: 0.012g SC-236MOD SC-59 2-3F1A Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage RN1414~1418 RN1414 RN1415 Emitter-base voltage RN1416 RN1417 RN1418 .

RN1418 : RN1414~RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414,RN1415,RN1416 RN1417,RN1418 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2414~RN2418 Unit: mm Equivalent Circuit and Bias Resister Values Type No. RN1414 RN1415 RN1416 RN1417 RN1418 R1 (kΩ) 1 2.2 4.7 10 47 R2 (kΩ) 10 10 10 4.7 10 JEDEC EIAJ TOSHIBA Weight: 0.012g SC-236MOD SC-59 2-3F1A Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage RN1414~1418 RN1414 RN1415 Emitter-base voltage RN1416 RN1417 RN1418 .