RN2316

RN2310 : RN2310,RN2311 Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2310,RN2311 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN1310 to RN1311 3. Equivalent Circuit 4. Packaging and Pin Assignment USM 1: Base 2: Emitter 3: Collector ©2021 1 Toshiba Electronic Devices & Sto.

RN2311 : RN2310,RN2311 Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2310,RN2311 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN1310 to RN1311 3. Equivalent Circuit 4. Packaging and Pin Assignment USM 1: Base 2: Emitter 3: Collector ©2021 1 Toshiba Electronic Devices & Sto.

RN2312 : RN2312, RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2312, RN2313 Switching, Inverter Circuit, Interface Circuit and Driver Circuit  With built-in bias resistors.  Simplify circuit design  Reduce a quantity of parts and manufacturing process and miniaturize equipment.  Various resistance values are available to suit various circuit designs.  Complementary to RN1312 to RN1313 Equivalent Circuit Unit: mm Absolute Maximum Ratings (Ta = 25°C) USM JEDEC ― JEITA SC-70 TOSHIBA 2-2E1A Weight: 0.006g (typ.) Characterisstic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power.

RN2313 : RN2312, RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2312, RN2313 Switching, Inverter Circuit, Interface Circuit and Driver Circuit  With built-in bias resistors.  Simplify circuit design  Reduce a quantity of parts and manufacturing process and miniaturize equipment.  Various resistance values are available to suit various circuit designs.  Complementary to RN1312 to RN1313 Equivalent Circuit Unit: mm Absolute Maximum Ratings (Ta = 25°C) USM JEDEC ― JEITA SC-70 TOSHIBA 2-2E1A Weight: 0.006g (typ.) Characterisstic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power.

RN2314 : RN2314 to RN2318 Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2314/15/16/17/18 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN1314 to RN1318 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN2314 RN2315 RN2316 RN2317 RN2318 R1 (kΩ) 1 2.2 4.7 10 47 R2 (kΩ) 10 .

RN2315 : RN2314 to RN2318 Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2314/15/16/17/18 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN1314 to RN1318 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN2314 RN2315 RN2316 RN2317 RN2318 R1 (kΩ) 1 2.2 4.7 10 47 R2 (kΩ) 10 .

RN2317 : RN2314 to RN2318 Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2314/15/16/17/18 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN1314 to RN1318 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN2314 RN2315 RN2316 RN2317 RN2318 R1 (kΩ) 1 2.2 4.7 10 47 R2 (kΩ) 10 .

RN2318 : RN2314 to RN2318 Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2314/15/16/17/18 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN1314 to RN1318 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN2314 RN2315 RN2316 RN2317 RN2318 R1 (kΩ) 1 2.2 4.7 10 47 R2 (kΩ) 10 .