| Part Number | RN2424 |
| Manufacturer | Toshiba |
| Title | Silicon PNP Epitaxial Type Transistor |
| Description | RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2421, RN2422, RN2423, RN2424 RN242... |
| Features |
RN2421 to 2427
VCBO VCEO
VEBO
Ic Pc Tj Tstg
−50
V
−50
V
−10
−5
V
−6
−800
mA
200
mW
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to d...
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| File Size | 573.80KB |
| Datasheet |
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RN2421 : RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2421, RN2422, RN2423, RN2424 RN2425, RN2426, RN2427 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z High current type (IC(MAX) = −800mA) z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process z Low VCE (sat) z Complementary to RN1421 to RN1427 Equivalent Circuit and Bias Resistor Values Type No. R1 (kΩ) R2 (kΩ) RN2421 1 1 RN2422 2.2 2.2 RN2423 4.7 4.7 RN2424 10 10 RN2425 0.47 10 RN2426 1 10 RN2427 2.2 10 Absolute Maximum Ratings (Ta = 25°C) JEDEC ― JEITA .
RN2422 : RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2421, RN2422, RN2423, RN2424 RN2425, RN2426, RN2427 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z High current type (IC(MAX) = −800mA) z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process z Low VCE (sat) z Complementary to RN1421 to RN1427 Equivalent Circuit and Bias Resistor Values Type No. R1 (kΩ) R2 (kΩ) RN2421 1 1 RN2422 2.2 2.2 RN2423 4.7 4.7 RN2424 10 10 RN2425 0.47 10 RN2426 1 10 RN2427 2.2 10 Absolute Maximum Ratings (Ta = 25°C) JEDEC ― JEITA .
RN2423 : RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2421, RN2422, RN2423, RN2424 RN2425, RN2426, RN2427 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z High current type (IC(MAX) = −800mA) z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process z Low VCE (sat) z Complementary to RN1421 to RN1427 Equivalent Circuit and Bias Resistor Values Type No. R1 (kΩ) R2 (kΩ) RN2421 1 1 RN2422 2.2 2.2 RN2423 4.7 4.7 RN2424 10 10 RN2425 0.47 10 RN2426 1 10 RN2427 2.2 10 Absolute Maximum Ratings (Ta = 25°C) JEDEC ― JEITA .
RN2425 : RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2421, RN2422, RN2423, RN2424 RN2425, RN2426, RN2427 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z High current type (IC(MAX) = −800mA) z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process z Low VCE (sat) z Complementary to RN1421 to RN1427 Equivalent Circuit and Bias Resistor Values Type No. R1 (kΩ) R2 (kΩ) RN2421 1 1 RN2422 2.2 2.2 RN2423 4.7 4.7 RN2424 10 10 RN2425 0.47 10 RN2426 1 10 RN2427 2.2 10 Absolute Maximum Ratings (Ta = 25°C) JEDEC ― JEITA .
RN2426 : RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2421, RN2422, RN2423, RN2424 RN2425, RN2426, RN2427 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z High current type (IC(MAX) = −800mA) z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process z Low VCE (sat) z Complementary to RN1421 to RN1427 Equivalent Circuit and Bias Resistor Values Type No. R1 (kΩ) R2 (kΩ) RN2421 1 1 RN2422 2.2 2.2 RN2423 4.7 4.7 RN2424 10 10 RN2425 0.47 10 RN2426 1 10 RN2427 2.2 10 Absolute Maximum Ratings (Ta = 25°C) JEDEC ― JEITA .
RN2427 : RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2421, RN2422, RN2423, RN2424 RN2425, RN2426, RN2427 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z High current type (IC(MAX) = −800mA) z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process z Low VCE (sat) z Complementary to RN1421 to RN1427 Equivalent Circuit and Bias Resistor Values Type No. R1 (kΩ) R2 (kΩ) RN2421 1 1 RN2422 2.2 2.2 RN2423 4.7 4.7 RN2424 10 10 RN2425 0.47 10 RN2426 1 10 RN2427 2.2 10 Absolute Maximum Ratings (Ta = 25°C) JEDEC ― JEITA .
RN242CS : PIN diode RN242CS zApplications High frequency switching zDimensions (Unit : mm) zLead size figure (Unit : mm) 0.55 0.45 0.45 0.5 zFeatures 1) Ultra small mold type. (VMN2) 2) Low high frequency resistance and lowcapacitance zConstruction Silicon epitaxial planer zTaping dimensions (Unit : mm) VMN2 zStructure zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage(DC) Forward current Junction temperature VR IF Tj Storage temperature Tstg Limits 30 100 150 -55 to +150 Unit V mA °C °C zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Forward voltage Reverse current Capacitance between terminals VF - - 1 IR - - 0.1 Ct - - 0.35 High frequenc.