| Part Number | RN2607 |
| Manufacturer | Toshiba |
| Title | Silicon PNP Epitaxial Type Transistor |
| Description | RN2607,RN2608 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2607, RN2608 Switching, Inverter ... |
| Features |
2607 RN2608
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
−50
V
VCEO
−50
V
−6
VEBO
V
−7
IC
−100
mA
PC*
300
mW
Tj
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperatu...
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| File Size | 752.96KB |
| Datasheet |
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RN2601 : RN2601 to RN2606 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2601, RN2602, RN2603 RN2604, RN2605, RN2606 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1601 to RN1606 Equivalent Circuit and Bias Resistor Values Part No. R1 (kΩ) R2 (kΩ) RN2601 4.7 4.7 RN2602 10 10 RN2603 22 22 RN2604 47 47 RN2605 2.2 47 RN2606 4.7 47 1. EMITTER 1 (E1) 2. BASE 1 (B1) 3. COLLECTOR 2 (C2) 4. EMITTER.
RN2602 : RN2601 to RN2606 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2601, RN2602, RN2603 RN2604, RN2605, RN2606 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1601 to RN1606 Equivalent Circuit and Bias Resistor Values Part No. R1 (kΩ) R2 (kΩ) RN2601 4.7 4.7 RN2602 10 10 RN2603 22 22 RN2604 47 47 RN2605 2.2 47 RN2606 4.7 47 1. EMITTER 1 (E1) 2. BASE 1 (B1) 3. COLLECTOR 2 (C2) 4. EMITTER.
RN2603 : RN2601 to RN2606 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2601, RN2602, RN2603 RN2604, RN2605, RN2606 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1601 to RN1606 Equivalent Circuit and Bias Resistor Values Part No. R1 (kΩ) R2 (kΩ) RN2601 4.7 4.7 RN2602 10 10 RN2603 22 22 RN2604 47 47 RN2605 2.2 47 RN2606 4.7 47 1. EMITTER 1 (E1) 2. BASE 1 (B1) 3. COLLECTOR 2 (C2) 4. EMITTER.
RN2604 : RN2601 to RN2606 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2601, RN2602, RN2603 RN2604, RN2605, RN2606 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1601 to RN1606 Equivalent Circuit and Bias Resistor Values Part No. R1 (kΩ) R2 (kΩ) RN2601 4.7 4.7 RN2602 10 10 RN2603 22 22 RN2604 47 47 RN2605 2.2 47 RN2606 4.7 47 1. EMITTER 1 (E1) 2. BASE 1 (B1) 3. COLLECTOR 2 (C2) 4. EMITTER.
RN2605 : RN2601 to RN2606 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2601, RN2602, RN2603 RN2604, RN2605, RN2606 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1601 to RN1606 Equivalent Circuit and Bias Resistor Values Part No. R1 (kΩ) R2 (kΩ) RN2601 4.7 4.7 RN2602 10 10 RN2603 22 22 RN2604 47 47 RN2605 2.2 47 RN2606 4.7 47 1. EMITTER 1 (E1) 2. BASE 1 (B1) 3. COLLECTOR 2 (C2) 4. EMITTER.
RN2606 : RN2601 to RN2606 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2601, RN2602, RN2603 RN2604, RN2605, RN2606 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1601 to RN1606 Equivalent Circuit and Bias Resistor Values Part No. R1 (kΩ) R2 (kΩ) RN2601 4.7 4.7 RN2602 10 10 RN2603 22 22 RN2604 47 47 RN2605 2.2 47 RN2606 4.7 47 1. EMITTER 1 (E1) 2. BASE 1 (B1) 3. COLLECTOR 2 (C2) 4. EMITTER.
RN2608 : RN2607,RN2608 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2607, RN2608 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN1607,RN1608 Equivalent Circuit and Bias Resistor Values SM6 JEDEC ― JEITA ― TOSHIBA 2-3N1A Weight: 0.015 g (typ.) Part No RN2607 RN2608 R1 (kΩ) 10 22 R2 (kΩ) 47 47 Internal Circuit (top .
RN2609 : RN2607~RN2609 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2607,RN2608,RN2609 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in SM6 (super mini type with 6 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1607~RN1609 Unit in mm Equivalent Circuit andBias Resistor Values Type No. RN2607 RN2608 RN2609 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 JEDEC EIAJ TOSHIBA Weight: 0.015g ― ― 2-3N1A Eauivalent Circuit (Top View) Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage RN2607~RN2609 RN2607 Emitter-.