| Part Number | RN2714 |
| Manufacturer | Toshiba |
| Title | Silicon PNP Epitaxial Type Transistor |
| Description | RN2714 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2714 Switching, Inverter Circuit, Interf... |
| Features |
current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability ...
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| File Size | 305.54KB |
| Datasheet |
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RN2710 : RN2710,RN2711 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN2710, RN2711 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN1710 and RN1711 Equivalent Circuit USV JEDEC ― JEITA ― TOSHIBA 2-2L1A Weight: 6.2 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Uni.
RN2710JE : RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2710JE, RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. • Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. • A wide range of resistor values are available for use in various circuit designs. • Complementary to RN1710JE, RN1711JE Equivalent Circuit C R1 B E Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics .
RN2711 : RN2710,RN2711 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN2710, RN2711 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN1710 and RN1711 Equivalent Circuit USV JEDEC ― JEITA ― TOSHIBA 2-2L1A Weight: 6.2 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Uni.
RN2711JE : RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2710JE, RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. • Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. • A wide range of resistor values are available for use in various circuit designs. • Complementary to RN1710JE, RN1711JE Equivalent Circuit C R1 B E Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics .
RN2712JE : RN2712JE,RN2713JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2712JE, RN2713JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm z Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. z Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. z A wide range of resistor values is available for use in various circuits. Equivalent Circuit 1.BASE1 (B1) 2.EMITTER (E) 3.BASE2 (B2) 4.COLLECTOR2 (C2) 5.COLLECTOR1 (C1) Absolute Maximum Ratings (Ta = 25°C) Char.
RN2713JE : RN2712JE,RN2713JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2712JE, RN2713JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm z Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. z Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. z A wide range of resistor values is available for use in various circuits. Equivalent Circuit 1.BASE1 (B1) 2.EMITTER (E) 3.BASE2 (B2) 4.COLLECTOR2 (C2) 5.COLLECTOR1 (C1) Absolute Maximum Ratings (Ta = 25°C) Char.