| Part Number | BDW94B |
| Manufacturer | NJS |
| Title | Silicon PNP Power Transistor |
| Description | • Collector Current -lc= -12A • Collector-Emitter Sustaining Voltage- : VCEO(sus) = -45V(Min)- BDW94; -60V(Min)- BDW94A -SOV(Min)- BDW94B; -100V(M... |
| Features |
j-c Thermal Resistance, Junction to Case
MAX 1.5
UNIT
•c/w Quality Semi-Conductors r i'ii 12 3 -vw — l-wv — I — * R' 12 -3 "H 1.BASE 2. COLLECTOR 3. EMITTER TO-220C package r , rJTL, jlUl^t A / MOOV *1 */* soi'. . \^j"*~L K \ , H G *- R|*- V tc ! j mm DIM MIN MAX A 15.70 15.... |
| File Size | 76.49KB |
| Datasheet |
|
BDW94 : BDW94/C PNP Epitaxial Silicon Transistor BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93 and BDW93C Respectively January 2005 1 TO-220 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : BDW94 : BDW94C VCEO Collector-Emitter Voltage : BDW94 : BDW94C IC ICP IB PC TJ TSTG Collector Current (DC) Collector Current (Pulse) * Base Current Collector Dissipation (TC = 25°C) Junction Temperature Storage Temperature Value -45 -100 -45 -100 -12 -15 -0.2 80 150 -65 ~ 150 Units V V V V A A A W °C °C ©2005 Fairchild Semiconductor Corp.
BDW94 : BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW93, BDW93A, BDW93B and BDW93C ● 80 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 5 A This series is obsolete and not recommended for new designs. TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW94 OBSOLETE Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C.
BDW94 : • Collector Current -lc= -12A • Collector-Emitter Sustaining Voltage- : VCEO(sus) = -45V(Min)- BDW94; -60V(Min)- BDW94A -SOV(Min)- BDW94B; -100V(Min)- BDW94C • Complement to Type BDW93/A/B/C APPLICATIONS • Designed for hammer drivers, audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25-C) SYMBOL PARAMETER VALUE UNIT BDW94 -45 VCBO Collector-Base Voltage BDW94A -60 V BDW94B -80 BDW94C -100 BDW94 -45 VCEO Collector-Emitter Voltage BDW94A -60 V BDW94B -80 BDW94C -100 VEBO Emitter-Base Voltage -5 V Ic Collector Current-Continuous ICM Collector Current-Peak -12 A -15 A la Base Current Collector Power Dissipation PC @ TC=25'C Tj Junction Tempe.
BDW94 : Darlington Transistors BDW93, BDW94 Series Features: Designed for general-purpose amplifier and low speed switching applications • Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - BDW93B, BDW94B 100 V (Minimum) - BDW93C, BDW94C • Collector-emitter saturation voltage-VCE (sat) = 2 V (Maximum) at IC = 5 A • Monolithic construction with built-in-base-emitter shunt resistor Dimension Minimum Maximum Pin : 1. Base 2. Collector 3. Emitter 4. Collector (Case) A B C D E F G H I J K L M O Maximum Ratings Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Peak Base Current Total Power Dissipation at TC = 25°C Derat.
BDW94 : ·Collector Current -IC= -12A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDW94; -60V(Min)- BDW94A -80V(Min)- BDW94B; -100V(Min)- BDW94C ·Complement to Type BDW93/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for hammer drivers, audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW94 -45 VCBO Collector-Base Voltage BDW94A -60 V BDW94B -80 BDW94C -100 BDW94 -45 VCEO Collector-Emitter Voltage BDW94A -60 V BDW94B -80 BDW94C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -15 A IB .
BDW94 : ·Collector Current -IC= -12A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDW94; -60V(Min)- BDW94A -80V(Min)- BDW94B; -100V(Min)- BDW94C ·Complement to Type BDW93/A/B/C APPLICATIONS ·Designed for hammer drivers, audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW94 -45 VCBO Collector-Base Voltage BDW94A BDW94B -60 -80 V BDW94C -100 BDW94 -45 VCEO Collector-Emitter Voltage BDW94A BDW94B -60 -80 V BDW94C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak IB Base Current Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperat.
BDW94A : BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW93, BDW93A, BDW93B and BDW93C ● 80 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 5 A This series is obsolete and not recommended for new designs. TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW94 OBSOLETE Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C.
BDW94A : BDW94/A/B/C BDW94/A/B/C Power Linear and Switching Applications • Power Darlington TR • Complement to BDW93, BDW93A, BDW93B and BDW93C respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BDW94 : BDW94A : BDW94B : BDW94C VCEO Collector-Emitter Voltage : BDW94 : BDW94A : BDW94B : BDW94C Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature - 45 - 60 - 80 - 100 - 45 - 60 - 80 - 100 - 12 - 15 - 0.2 80 150 - 65 ~ 150 V V V V V V V V A A A W °C °C Value Units IC ICP IB PC TJ TST.
BDW94A : • Collector Current -lc= -12A • Collector-Emitter Sustaining Voltage- : VCEO(sus) = -45V(Min)- BDW94; -60V(Min)- BDW94A -SOV(Min)- BDW94B; -100V(Min)- BDW94C • Complement to Type BDW93/A/B/C APPLICATIONS • Designed for hammer drivers, audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25-C) SYMBOL PARAMETER VALUE UNIT BDW94 -45 VCBO Collector-Base Voltage BDW94A -60 V BDW94B -80 BDW94C -100 BDW94 -45 VCEO Collector-Emitter Voltage BDW94A -60 V BDW94B -80 BDW94C -100 VEBO Emitter-Base Voltage -5 V Ic Collector Current-Continuous ICM Collector Current-Peak -12 A -15 A la Base Current Collector Power Dissipation PC @ TC=25'C Tj Junction Tempe.
BDW94A : ·Collector Current -IC= -12A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDW94; -60V(Min)- BDW94A -80V(Min)- BDW94B; -100V(Min)- BDW94C ·Complement to Type BDW93/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for hammer drivers, audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW94 -45 VCBO Collector-Base Voltage BDW94A -60 V BDW94B -80 BDW94C -100 BDW94 -45 VCEO Collector-Emitter Voltage BDW94A -60 V BDW94B -80 BDW94C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -15 A IB .
BDW94A : ·Collector Current -IC= -12A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDW94; -60V(Min)- BDW94A -80V(Min)- BDW94B; -100V(Min)- BDW94C ·Complement to Type BDW93/A/B/C APPLICATIONS ·Designed for hammer drivers, audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW94 -45 VCBO Collector-Base Voltage BDW94A BDW94B -60 -80 V BDW94C -100 BDW94 -45 VCEO Collector-Emitter Voltage BDW94A BDW94B -60 -80 V BDW94C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak IB Base Current Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperat.
BDW94B : The BDW93C is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is BDW94C. Also BDW94B is a PNP type. 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 KΩ R2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO IC ICM IB P tot Ts tg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Collector Current Collector Peak Current Base Current T otal Dissipation at Tc ≤ 25 C Storage Temperature o Value BDW93C BDW94B 80 80 12 15 0.2 80 -65 to 150 150 BDW94C 100 100 Un it V V A A A .
BDW94B : BDW94/A/B/C BDW94/A/B/C Power Linear and Switching Applications • Power Darlington TR • Complement to BDW93, BDW93A, BDW93B and BDW93C respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BDW94 : BDW94A : BDW94B : BDW94C VCEO Collector-Emitter Voltage : BDW94 : BDW94A : BDW94B : BDW94C Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature - 45 - 60 - 80 - 100 - 45 - 60 - 80 - 100 - 12 - 15 - 0.2 80 150 - 65 ~ 150 V V V V V V V V A A A W °C °C Value Units IC ICP IB PC TJ TST.
BDW94B : Darlington Transistors BDW93, BDW94 Series Features: Designed for general-purpose amplifier and low speed switching applications • Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - BDW93B, BDW94B 100 V (Minimum) - BDW93C, BDW94C • Collector-emitter saturation voltage-VCE (sat) = 2 V (Maximum) at IC = 5 A • Monolithic construction with built-in-base-emitter shunt resistor Dimension Minimum Maximum Pin : 1. Base 2. Collector 3. Emitter 4. Collector (Case) A B C D E F G H I J K L M O Maximum Ratings Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Peak Base Current Total Power Dissipation at TC = 25°C Derat.
BDW94B : BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW93, BDW93A, BDW93B and BDW93C ● 80 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 5 A This series is obsolete and not recommended for new designs. TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW94 OBSOLETE Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C.
BDW94B : ·Collector Current -IC= -12A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDW94; -60V(Min)- BDW94A -80V(Min)- BDW94B; -100V(Min)- BDW94C ·Complement to Type BDW93/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for hammer drivers, audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW94 -45 VCBO Collector-Base Voltage BDW94A -60 V BDW94B -80 BDW94C -100 BDW94 -45 VCEO Collector-Emitter Voltage BDW94A -60 V BDW94B -80 BDW94C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -15 A IB .