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Part Number
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HN4B101J |
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Manufacturer
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Toshiba |
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Title
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Silicon NPN/PNP Epitaxial Type Transistor |
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Description
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HN4B101J
TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)
HN4B101J
MOS Gate Drive Applications Switching Applications
• Small fo...
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Features
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ector (NPN) 5. Collector (PNP)
JEDEC
―
JEITA
―
TOSHIBA
2-3L1A
Weight: 0.014g (typ.)
Collector power dissipation (DC)
Single-device operation
PC (Note 2)
0.55
W
Junction temperature Storage temperature range
Tj
150
°C
Tstg
−55 to 150
°C
Note 1: Ensure that the channel temperature ...
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File Size
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250.38KB |
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Datasheet
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HN4B101J PDF File
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