| Part Number | RN4611 |
| Manufacturer | Toshiba |
| Title | Silicon NPN/PNP Epitaxial Type Transistor |
| Description | TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4611 Switching, Inverter Circuit, Inter... |
| Features |
ion
Start of commercial production
1988-11
2019-11-01
RN4611
Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector power dissipation Junction temperature Storage temperature range
PC * Tj Tstg
300
mW
150
°C
−55 to 150
°C
Note: Using continuous...
|
| File Size | 562.95KB |
| Datasheet |
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RN4610 : TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4610 Switching, Inverter Circuit, Interface Circuit and Driver Circuit RN4610 Unit: mm Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 4.7kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating Unit −50 V −50 V −5 V −100 mA JEDEC ― JEI.
RN4612 : TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4612 Switching, Inverter Circuit, Interface Circuit and Driver Circuit RN4612 Unit: mm Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 22kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating −50 −50 −5 −100 Q2 Absolute Maximum Ratings (Ta = 25°.