2SA1090

2SA1091 : TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1091 2SA1091 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V • Low saturation voltage: VCE (sat) = −0.5 V (max) • Small collector output capacitance: Cob = 6 pF (typ.) • Complementary to 2SC2551. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −300 V Collector-emitter voltage VCEO −300 V Emitter-base voltage VEBO −8 V Collector current IC −100 mA Base current Collector power dissipation Junction temperature Storage t.

2SA1091 : TO-92 PNP 。Silicon PNP transistor in a TO-92 Plastic Package.  / Features ,,。 High voltage, low saturation voltage, small collector output capacitance.. / Applications ,,。 High voltage control, plasma display, nixie tube driver, cathode ray tube brightness control applications. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range R 30~90 O 50~150 http://www.fsbrec.com 1/6 2SA1091 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Base Current - Continuous.

2SA1091 : 2SA1091(3CG1091) PNP /SILICON PNP TRANSISTOR :,,/Purpose: High voltage control, plasma display, nixie tube driver, cathode ray tube brightness control applications. :,,/Features: High voltage, low saturation voltage, small collector output capacitance. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -300 V VCEO -300 V VEBO -8.0 V IC -100 mA IB -20 mA PC 400 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob IC=-0.1mA IC=-1.0mA VCB=-300V VEB=-8.0V VCE=-10V VCE=-10V IC=-20mA IC=-20mA VCE=-10V VCB=-20V IE=0 IE=0 IB=0 IE=0 IC=0 IC=-20mA IC=-1.0mA IB=-2.0mA IB.

2SA1093 : SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1093 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SC2563. . Recommended for 50W audio amplifier output stage, . High transition frequency : fr=90MHz(Typ. ) Unit in mm 0a2±O.2 L5.9MAX . MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VcBO Collector-Emitter Voltage VCEO Emitter-Base Voltage Collector Current 'EBO ic Base Current IB Collector Power Dissipation (Tc=25°C) Junction Temperature PC Storage Temperature Range stg RATING -120 -120 -5 UNIT -0.8 80 150 -55-150 5.4 5 ±L .2 +' 3 --+rn | 5.45 7_:0. 5 CD X PnA 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER EIAJ T OSHIB.

2SA1093 : ·With TO-3P(I) package ·Complement to type 2SC2563 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier applicatios PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -8 -0.8 80 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silic.

2SA1093 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Good Linearity of hFE ·Complement to Type 2SC2563 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ·Recommend for 50W audio amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.8 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1093.

2SA1094 : : 2SA1094 I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : VcE0=~140V • High Transition Frequency : fx=70MHz (Typ.) • Complementary to 2SC2564. • Recommended for 80W High-Fidelity Audio Frequency Amplifier Output Stage. Unit in mm MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power .Dissipation CTc=25°C) Junction Temperature Storage Temperature Range SYMBOL VcBO v CEO VEBO ic IE RATING UNIT -140 -140 -5 -12 12 PC Ti -stg 120 150 -55^150 °C 1. BASE 2. COLLECTOR(HEAT SINK) 3. EMITTER 2 - 34 A 1 A Weight : 10. 8g ELEC.

2SA1094 : ·With MT-200 package ·Complement to type 2SC2564 APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -140 -140 -5 -12 -1.2 120 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors C.

2SA1094 : ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2564 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommended for 80W high-fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IE Emitter Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 .

2SA1095 : : I 1 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : Vceo=-160V • High Transition Frequency : f T=60MHz (Typ.) • Complementary to 2SC2565. • Recommended for 100W High-Fidelity Audio Frequency Amplifier Output Stage. 34.3MAX Unit in mm 5.3MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VcBO VCEO v EBO ic T stg RATING -160 -160 -5 -15 15 150 150 -55M.50 UNIT V 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER JEDEC TOSHIBA 2 - 34A1A.

2SA1095 : ·With MT-200 package ·Complement to type 2SC2565 ·High breakdown voltage ·High transition frequency APPLICATIONS ·Power amplifier applications ·Recommended for 100W high-fidelity audio frequency amplifer output stage PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collectorl power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -5 -15 15 150 150 .

2SA1095 : ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2565 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommended for 100W high-fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IE Emitter Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 .

2SA1096 : Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1096 and 2SA1096A I Features • High collector to emitter voltage VCEO • TO-126B package which requires no insulation plate for installation to the heat sink 8.0+0.5 –0.1 φ 3.16±0.1 3.8±0.3 11.0±0.5 3.2±0.2 1.9±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage 2SC2497 2SC2497A VEBO ICP IC PC Tj Tstg Symbol VCBO VCEO Rating 70 50 60 5 3 1.5 1.2 *1 5 *2 Junction temperature Storage temperature 150 −55 to +150 °C °C V A A W Unit V V 1 2 0.75±0.1 4.6±0.2 0.5±0.1 0.5±0.1 2.3±0.2 3 1.76±0.1 16.0±1.0 E.

2SA1096 : ·With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2SA1096 VCEO Collector- emitter voltage 2SA1096A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Open collector Open base -60 -5 -2 -3 1.2* PD Total power dissipation TC=25 5* Tj Tstg Junction temperature Storage temperature 2 1 CONDITIONS Open emitter VALUE UNIT V -70 -50 V V A A W 150 -55 +150 Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink SavantIC Semiconductor www.Da.

2SA1096 : ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2497 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 1.2 W 5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsem.

2SA1096A : Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1096 and 2SA1096A I Features • High collector to emitter voltage VCEO • TO-126B package which requires no insulation plate for installation to the heat sink 8.0+0.5 –0.1 φ 3.16±0.1 3.8±0.3 11.0±0.5 3.2±0.2 1.9±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage 2SC2497 2SC2497A VEBO ICP IC PC Tj Tstg Symbol VCBO VCEO Rating 70 50 60 5 3 1.5 1.2 *1 5 *2 Junction temperature Storage temperature 150 −55 to +150 °C °C V A A W Unit V V 1 2 0.75±0.1 4.6±0.2 0.5±0.1 0.5±0.1 2.3±0.2 3 1.76±0.1 16.0±1.0 E.